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Preliminary

RF2117

* 3.6V Analog Handsets * Analog Communication Systems * 400MHz Industrial Radios * Portable Battery Powered Equipment
2
POWER AMPLIFIERS

The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM applications operating at 433MHz. The device is packaged in a low cost 16-lead plastic package with a metal backside. The device is self-contained with the exception of the output matching network and power supply feed line.
.244 .230 1 .393 .386 .021 .015 .050 .004 .000 EXPOSED HEATSINK .287 .271
.158 .152
.065 .055
.087 .071
8MAX 5MIN .035 .016 .0098 .0075
Package Weight typically 0.22 grams

Si BJT Si Bi-CMOS
GaAs HBT
SiGe HBT
!"
GaAs MESFET Si CMOS
* Single 3V to 5.5V Supply * Up to 2W CW Output Power * 33dB Small Signal Gain * >50% Efficiency * 400MHz to 500MHz Operation
VREG 1 VCC1 2 LTUNE 3 Q1C 4 GND 5 RFIN 6 NC 7 VPD 8 Bias Circuits
16 NC 15 NC 14 RFOUT 13 RFOUT 12 RFOUT 11 NC 10 NC 9 NC

RF2117 RF2117 PCBA High Efficiency 400MHz Amplifier Fully Assembled Evaluation Board

RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A0 991201
2-47
RF2117
Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature
Preliminary
Rating
-0.5 to +6.0 -0.5 to +3.0 1300 +10 7:1 -40 to +100 -40 to +85 -55 to +150
Unit
VDC V mA dBm C C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum CW Output Power
Specification Min. Typ. Max.
Unit
Condition
T=25 C, VCC =3.6V, VPD =2.2V, ZLOAD =2.7, PIN =4dBm, Freq=450MHz
400 to 500 +33 +32.5 +31.5 52
Total CW Efficiency Small-signal Gain Harmonics All Other Spurious Input VSWR Input Power Input Impedance Noise Power in Rx Band
-30
55 45 33 -40 -70 <2:1 +4 50
MHz dBm dBm dBm % % dB dBc dBc
VCC =3.2 to 4.5V Tamb=-25 to +85 C VCC =3.0 to 3.2V and 4.5 to 5.5V Vcc=3.0V Pout=+32.5 dBm Vcc=3.6V Pout=+32.5 dBm Vcc=3.0 to 5.5V Tamb= -25 to +85 C Load VSWR6:1 all phase angles, Zs=50 , Vcc=3.0V to 5.5V, Tamb= -30 to +85 C
+2
+6 -80dBm
dBm dBm
Intermodulation Conversion at TX Freq. - 10MHz Power Down Isolation
12 45
dB dB
Pout=+32.5 dBm, Freq.= 410 to 485 MHz, Tamb= -30 to +85C VSWR 6:1 all phase angles. Pout=+15dBm to +32.5 dBm VPD grounded through 1k resistor Pin=+6dBm
Power Control
Control Voltage VPD Control Current Gain Control 0 2.4 6 V mA dB 3.6 1100 2.8 5.3 2.9 12 V mA V mA
35 3.0 2.7
Power Supply
Power Supply Voltage Power Supply Current Regulated Voltage VREG Current from VREG DC Current at POUT,MAX
2-48
Rev A0 991201
Preliminary
Pin 1 Function VREG Description
Regulated Supply for bias circuit. This pin should be connected to the regulated supply with a ferrite of 240 ohms and should have a UHF decoupling capacitor (100pF) to ground at the supply end of the ferrite. An additional capacitor of 1nF can be added with the 100 pF but it's placement is not as critical. Positive supply for the active bias circuits. Bypassing should be accomplished with a single UHF decoupling capacitor, placed close to the Pin. Additional bypassing of 1nF is also recommended, but proximity to the package is not as critical. The Inter-stage matching point of the amplifiers. Matching should be performed with a small value inductor connected from the pin to ground. Positive Supply to the first stage collector. The supply should be fed through a parallel LC network, resonant at the centre of the band of interest. A UHF decoupling capacitor should be placed from the supply end of the LC to ground. A 1nF capacitor can also be used but it's placement it not as critical. Ground Contact for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. It is important for stability that this pin has it's own via to the groundplane, to minimize any common inductance. Amplifier RF input. This is a 50 RF input port to the amplifier. It does not contain internal DC blocking and therefore should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC blocking. Not internally connected. Power Down control. When this pin is "low" all circuits are off. A low is typically less than 0.5V at room temperature. This pin affords a measure of power control, however this response is not linear across much of the range. It is recommended that the pin be used in closed loop power control systems if it is to be used across a range of voltages and temperatures for power control. Not internally connected. Not internally connected. Not internally connected. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 12, 13, and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these three pins. Typically, these pins are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. An additional network of a bias inductor (or /4 line) provides DC bias and helps to protect the output from high voltage swings due to severe load mismatches. Amplifier RF output, same as pin 12 Amplifier RF output, same as pin 12. Do not feed the supply to this pin alone. If this pin is used as the supply pin it must be connected in parallel with pin 12 and/or 13. Not internally connected. Not internally connected. This contact is the main ground contact for the entire device. Care should be taken to ensure that this contact is well soldered in order to prevent performance from being degraded from that indicated in the specifications.
RF2117
Interface Schematic
2
VCC1
2
POWER AMPLIFIERS
3 4
LTUNE Q1C
5
GND
6
RF IN
7 8
NC VPD
9 10 11 12
NC NC NC RF OUT
13 14 15 16 Pkg Base
RF OUT RF OUT NC NC GND
Rev A0 991201
2-49
RF2117

VREG 1F VCC
Preliminary
2
POWER AMPLIFIERS
1nF 100pF 1 240 Ferrite 1nF 2.2nH 2.7nH 1nF 100pF 47pF 5 6 100pF 22 Ferrite 7 8 VPD 240 Ferrite 4 100pF 2 3
3.3F
1nF
100pF
16 Bias Circuits 15 14
50 strip
4.7nH 13 100pF 12 11 10 9 30pF 13pF
100pF
2-50
Rev A0 991201
Preliminary

VR EG C19 1 uF R2 0 + C13 1 nF V CC
RF2117
2
+ C9 3.3 uF C10 1 nF C11 100 pF
L4 F errite (220 ohm ) C5 1 nF C6 100 pF
C7 100 pF 1 2 3 Bias C ircu its 16 15
120 nH 14 13 50 s trip L2 F errite (220 ohm ) J1 R F IN 50 s trip C1 100 pF L1 0 R es is tor L3 F errite (220 ohm ) C17 100 pF C18 1 nF VP D N o te: VC C = 3.6 V VP C = 2.7 V VR EG = 2.2 V PO U T = 31 d Bm F req = 220 M H z Pin = 3 d Bm Efficienc y = 44% 5 6 7 8 12 11 10 9
C 1 4 0.2 3 4 " fro m edge of RF2117
C4 100 pF
L5 20 nH
4
L6 6.8 nH C14 82 pF
50 s trip C15 27 pF
C16 330 pF
50 s trip
J3 RFOU T
C 1 5 0.3 8 8 " fro m edge of RF2117
P1 VR EG 1 2 VC C 3 CON 3 VC C
P2 1 2 3 CON 3 VP D
P3 1 2 3 CON 3
Rev A0 991201
2-51
POWER AMPLIFIERS
RF2117

(Download Bill of Materials from www.rfmd.com.)
Preliminary
2
POWER AMPLIFIERS
VR EG C19 1 uF R2 0 + C13 1 nF V CC
+ L4 F errite (220 ohm ) C5 1 nF C6 100 pF C7 100 pF 1 2 3 C4 100 pF L5 2.2 nH 4 5 6 7 8 L3 F errite (220 ohm ) C17 100 pF C18 1 nF VP D Bias C ircu its 16 15
C9 3.3 uF
C10 1 nF
C11 100 pF
50 s trip 14 13 50 s trip L2 F errite (220 ohm ) J1 R F IN 50 s trip C1 100 pF L1 F errite (22 ohm ) 12 11 10 9 P1 VR EG 1 2 VC C 3 CON 3 VC C P2 1 2 3 CON 3 VP D P3 1 2 3 CON 3 C14 27 pF C15 13 pF L6 4.7 nH C16 100 pF
50 s trip
50 s trip
J3 RFOU T
2-52
Rev A0 991201
Preliminary

RF2117
2
POWER AMPLIFIERS
Rev A0 991201
2-53
RF2117
Preliminary
2
POWER AMPLIFIERS
2-54
Rev A0 991201

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